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| BUP 213 IGBT Preliminary data * Low forward voltage drop * High switching speed * Low tail current * Latch-up free * Avalanche rated Pin 1 G Type BUP 213 Maximum Ratings Parameter Collector-emitter voltage Collector-gate voltage Symbol Values 1200 1200 Unit V Pin 2 C Ordering Code Q67040-A4407-A2 Pin 3 E VCE IC Package TO-220 AB 1200V 32A VCE VCGR VGE IC RGE = 20 k Gate-emitter voltage DC collector current 20 A 32 20 TC = 25 C TC = 90 C Pulsed collector current, tp = 1 ms ICpuls 64 40 TC = 25 C TC = 90 C Avalanche energy, single pulse EAS 22 mJ IC = 15 A, VCC = 50 V, RGE = 25 L = 200 H, Tj = 25 C Power dissipation Ptot 200 W -55 ... + 150 -55 ... + 150 C TC = 25 C Chip or operating temperature Storage temperature Tj Tstg Semiconductor Group 1 Nov-30-1995 BUP 213 Maximum Ratings Parameter DIN humidity category, DIN 40 040 IEC climatic category, DIN IEC 68-1 Thermal Resistance IGBT thermal resistance, chip case Symbol Values E 55 / 150 / 56 Unit - RthJC 0.63 K/W Electrical Characteristics, at Tj = 25 C, unless otherwise specified Parameter Symbol min. Static Characteristics Gate threshold voltage Values typ. max. Unit VGE(th) 4.5 5.5 2.7 3.3 3.4 4.3 6.5 3.2 3.9 - V VGE = VCE, IC = 0.35 mA Collector-emitter saturation voltage VCE(sat) - VGE = 15 V, IC = 15 A, Tj = 25 C VGE = 15 V, IC = 15 A, Tj = 125 C VGE = 15 V, IC = 30 A, Tj = 25 C VGE = 15 V, IC = 30 A, Tj = 125 C Zero gate voltage collector current ICES 0.8 mA nA 100 VCE = 1200 V, VGE = 0 V, Tj = 25 C Gate-emitter leakage current IGES VGE = 25 V, VCE = 0 V AC Characteristics Transconductance gfs 12 1000 150 70 - S pF 1350 225 100 VCE = 20 V, IC = 15 A Input capacitance Ciss Coss - VCE = 25 V, VGE = 0 V, f = 1 MHz Output capacitance VCE = 25 V, VGE = 0 V, f = 1 MHz Reverse transfer capacitance Crss - VCE = 25 V, VGE = 0 V, f = 1 MHz Semiconductor Group 2 Nov-30-1995 BUP 213 Electrical Characteristics, at Tj = 25 C, unless otherwise specified Parameter Symbol min. Switching Characteristics, Inductive Load at Tj = 125 C Turn-on delay time td(on) Values typ. max. Unit ns 70 100 VCC = 600 V, VGE = 15 V, IC = 15 A RGon = 82 Rise time - tr 45 70 VCC = 600 V, VGE = 15 V, IC = 15 A RGon = 82 Turn-off delay time td(off) 400 530 VCC = 600 V, VGE = -15 V, IC = 15 A RGoff = 82 Fall time tf 70 95 VCC = 600 V, VGE = -15 V, IC = 15 A RGoff = 82 Semiconductor Group 3 Nov-30-1995 BUP 213 Power dissipation Ptot = (TC) parameter: Tj 150 C 220 W Collector current IC = (TC) parameter: VGE 15 V , Tj 150 C 32 A Ptot 180 160 140 120 IC 24 20 16 100 80 60 40 4 20 0 0 20 40 60 80 100 120 C 160 0 0 20 40 60 80 100 120 C 160 12 8 TC TC Safe operating area IC = (VCE) parameter: D = 0, TC = 25C , Tj 150 C 10 2 t = 9.0s p 10 s Transient thermal impedance Zth JC = (tp) parameter: D = tp / T 10 0 IGBT A K/W IC 10 1 100 s ZthJC 10 -1 D = 0.50 0.20 10 0 1 ms 10 -2 0.10 0.05 10 ms single pulse 0.02 0.01 DC 10 -1 0 10 10 1 10 2 10 3 V 10 -3 -5 10 10 -4 10 -3 10 -2 10 -1 s 10 0 VCE tp Semiconductor Group 4 Nov-30-1995 BUP 213 Typ. output characteristics Typ. output characteristics IC = f (VCE) parameter: tp = 80 s, Tj = 25 C 30 A 17V 15V 13V 11V 9V 7V IC = f (VCE) parameter: tp = 80 s, Tj = 125 C 30 A 17V 15V 13V 11V 9V 7V IC 24 22 20 18 16 14 12 10 8 6 4 2 0 0 IC 24 22 20 18 16 14 12 10 8 6 4 2 0 1 2 3 V 5 0 1 2 3 V 5 VCE VCE Typ. transfer characteristics IC = f (VGE) parameter: tp = 80 s, VCE = 20 V 30 A IC 24 22 20 18 16 14 12 10 8 6 4 2 0 0 2 4 6 8 10 V 14 VGE Semiconductor Group 5 Nov-30-1995 BUP 213 Typ. switching time Typ. switching time I = f (IC) , inductive load , Tj = 125C par.: VCE = 600 V, VGE = 15 V, RG = 82 10 3 t = f (RG) , inductive load , Tj = 125C par.: VCE = 600 V, VGE = 15 V, IC = 15 A 10 3 tdoff t tdoff ns t ns tdon 10 2 tr tdon tf tf 10 2 tr 10 1 0 5 10 15 20 25 30 A IC 40 10 1 0 50 100 150 200 300 RG Typ. switching losses Typ. switching losses E = f (IC) , inductive load , Tj = 125C par.: VCE = 600 V, VGE = 15 V, RG = 82 10 mWs E 8 7 6 5 4 3 2 1 0 0 5 10 15 20 25 30 A IC 40 E = f (RG) , inductive load , Tj = 125C par.: VCE = 600V, VGE = 15 V, IC = 15 A 10 mWs E 8 7 6 5 4 Eon Eon Eoff 3 2 1 0 0 50 100 150 200 Eoff 300 RG Semiconductor Group 6 Nov-30-1995 BUP 213 Typ. gate charge VGE = (QGate) parameter: IC puls = 15 A 20 V Typ. capacitances C = f (VCE) parameter: VGE = 0 V, f = 1 MHz 10 1 nF VGE 16 14 12 10 8 C 600 V 800 V 10 0 Ciss Coss 10 -1 Crss 6 4 2 0 0 10 20 30 40 50 60 70 80 100 10 -2 0 5 10 15 20 25 30 Q Gate V 40 VCE Short circuit safe operating area Reverse biased safe operating area ICsc = f (VCE) , Tj = 150C parameter: VGE = 15 V, tsc 10 s, L < 25 nH 10 ICpuls = f (VCE) , Tj = 150C parameter: VGE = 15 V 2.5 ICsc /IC(90C) I Cpuls/I C 6 1.5 4 1.0 2 0.5 0 0 200 400 600 800 1000 1200 V 1600 VCE 0.0 0 200 400 600 800 1000 1200 V 1600 VCE Semiconductor Group 7 Nov-30-1995 BUP 213 Package Outlines Dimensions in mm Weight: Semiconductor Group 8 Nov-30-1995 |
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